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Dopant profiling in NixSi1-x gates with SIMS

dc.contributor.authorJanssens, Tom
dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorKittl, Jorge
dc.contributor.authorFouchier, Marc
dc.contributor.authorLauwers, Anne
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T02:18:53Z
dc.date.available2021-10-16T02:18:53Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10645
dc.sourceIIOimport
dc.titleDopant profiling in NixSi1-x gates with SIMS
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.conferenceUSJ - The 8th Int. Workshop on the Fabrication, Characterization and Modeling of Ultra Shallow Junctions in Semiconductors
dc.source.conferencedate5/06/2005
dc.source.conferencelocationDaytona Beach, FL USA
imec.availabilityPublished - imec


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