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Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process

dc.contributor.authorKang, JinFeng
dc.contributor.authorYu, HongYu
dc.contributor.authorRen, C.
dc.contributor.authorYang, H.
dc.contributor.authorSa, N.
dc.contributor.authorLiu, X.Y.
dc.contributor.authorHan, R.Q.
dc.contributor.authorLi, M.F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2021-10-16T02:26:44Z
dc.date.available2021-10-16T02:26:44Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10676
dc.sourceIIOimport
dc.titleScalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage375
dc.source.endpage378
dc.source.conferenceProceedings of the 35th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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