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Threshold voltage control in PMOSFETs with polysilicon or fully-Silicided gates on Hf-based gate dielectric using controlled lateral oxidation

dc.contributor.authorKaushik, Vidya
dc.contributor.authorRohr, Erika
dc.contributor.authorHyun, S.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorVeloso, Anabela
dc.contributor.authorBrus, Stephan
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorRichard, Olivier
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T02:28:53Z
dc.date.available2021-10-16T02:28:53Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10684
dc.sourceIIOimport
dc.titleThreshold voltage control in PMOSFETs with polysilicon or fully-Silicided gates on Hf-based gate dielectric using controlled lateral oxidation
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage305
dc.source.conferencePhysics and Technology if High-k Gate Dielectrics III
dc.source.conferencedate16/10/2005
dc.source.conferencelocationLos Angeles, CA USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions. Vol. 1, nr. 5


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