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Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface

dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorKittl, Jorge
dc.contributor.authorJanssens, Tom
dc.contributor.authorLauwers, Anne
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorSchram, Tom
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVan Dal, Mark
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-16T02:35:12Z
dc.date.available2021-10-16T02:35:12Z
dc.date.issued2005-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10707
dc.sourceIIOimport
dc.titleInfluence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewno
dc.source.beginpage241
dc.source.endpage248
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate16/05/2005
dc.source.conferencelocationQuebec Canada
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2005-05


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