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Silicides for advanced CMOS devices

dc.contributor.authorLauwers, Anne
dc.contributor.authorKittl, Jorge
dc.contributor.authorVan Dal, Mark
dc.contributor.authorChamirian, Oxana
dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorTorregiani, Cristina
dc.contributor.authorLiu, J.
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorvan Berkum, J.G.M.
dc.contributor.authorKaiser, M.
dc.contributor.authorVeloso, Anabela
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-16T02:47:49Z
dc.date.available2021-10-16T02:47:49Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10754
dc.sourceIIOimport
dc.titleSilicides for advanced CMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage379
dc.source.endpage388
dc.source.conferenceMicroscopy of Semiconducting Materials. Proceedings of the 14th Conference
dc.source.conferencedate11/04/2005
dc.source.conferencelocationOxford UK
imec.availabilityPublished - imec
imec.internalnotesSpringer Proceedings in Physics; Vol. 107


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