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Characteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications

dc.contributor.authorLoo, Roger
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLeys, Frederik
dc.contributor.authorShamiryan, Denis
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAbsil, Philippe
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T03:02:03Z
dc.date.available2021-10-16T03:02:03Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10802
dc.sourceIIOimport
dc.titleCharacteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewyes
dc.source.beginpage112
dc.source.endpage113
dc.source.conference4th International conference on Silicon Epitaxy and Heterostructures - ICSI-4
dc.source.conferencedate23/05/2005
dc.source.conferencelocationHyogo Japan
imec.availabilityPublished - imec


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