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A new method to calculate leakage current and its applications for sub-45nm MOSFETs

dc.contributor.authorLujan, Guilherme
dc.contributor.authorMagnus, Wim
dc.contributor.authorSoree, Bart
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVan Dal, Mark
dc.contributor.authorLauwers, Anne
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T03:04:42Z
dc.date.available2021-10-16T03:04:42Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10808
dc.sourceIIOimport
dc.titleA new method to calculate leakage current and its applications for sub-45nm MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage489
dc.source.endpage492
dc.source.conferenceProceedings of the 35th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2005
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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