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Low-frequency noise characterization of 90 nm multiple gate oxide CMOS transistors

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorSmolanka, A.
dc.contributor.authorLokshin, M.
dc.contributor.authorLee, Shih Chung
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T03:05:20Z
dc.date.available2021-10-16T03:05:20Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10810
dc.sourceIIOimport
dc.titleLow-frequency noise characterization of 90 nm multiple gate oxide CMOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage331
dc.source.endpage334
dc.source.conferenceNoise and Fluctuations: 18th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate19/09/2005
dc.source.conferencelocationSalamanca Spain
imec.availabilityPublished - imec
imec.internalnotesAIP Conference Proceedings; Vol. 780


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