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The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices

dc.contributor.authorMantl, S.
dc.contributor.authorBuca, Dan
dc.contributor.authorHollander, Bernd
dc.contributor.authorTrinkaus, Helmut
dc.contributor.authorHueging, Norbert
dc.contributor.authorLuysberg, Martina
dc.contributor.authorLenk, Steffi
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorShaefer, Herbert
dc.contributor.authorReiche, Manfred
dc.contributor.authorRadu, Ionut
dc.date.accessioned2021-10-16T03:14:49Z
dc.date.available2021-10-16T03:14:49Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10845
dc.sourceIIOimport
dc.titleThe use of ion implantation of strained silicon on SiO2 for nanoelectronic devices
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceMRS Fall Meeting Symposium OO: Growth, Modification, and Analysis by Ion Beams at the Nanoscale
dc.source.conferencedate28/11/2005
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesProc. to be published online as volume 908E of the MRS Symposium Proceedings Series


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