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Germanium deep-submicron pFET and nFET devices with etched TaN metal gate and high-k dielectric, fabricated on germanium-on-insulator substrates

dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorLetertre, Fabrice
dc.contributor.authorRaskin, Geoffroy
dc.contributor.authorBillon, Thierry
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T03:26:38Z
dc.date.available2021-10-16T03:26:38Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10888
dc.sourceIIOimport
dc.titleGermanium deep-submicron pFET and nFET devices with etched TaN metal gate and high-k dielectric, fabricated on germanium-on-insulator substrates
dc.typeOral presentation
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors
dc.source.conferencedate28/03/2005
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - imec


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