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Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM

dc.contributor.authorNafria, M.
dc.contributor.authorBlasco, X.
dc.contributor.authorPorti, M.
dc.contributor.authorAguilera, L.
dc.contributor.authorAymerich, X.
dc.contributor.authorPetry, Jasmine
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T03:36:38Z
dc.date.available2021-10-16T03:36:38Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10922
dc.sourceIIOimport
dc.titleNanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage65
dc.source.endpage68
dc.source.conferenceSpanish Conference on Electron Devices
dc.source.conferencedate2/02/2005
dc.source.conferencelocationSalamanca Spain
imec.availabilityPublished - imec


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