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Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application

dc.contributor.authorNiwa, Masaaki
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorYamamoto, Kazuhiko
dc.contributor.authorHayashi, S.
dc.contributor.authorHarada, Y.
dc.contributor.authorKubota, M.
dc.contributor.authorRothschild, Aude
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T03:40:08Z
dc.date.available2021-10-16T03:40:08Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10934
dc.sourceIIOimport
dc.titleProspect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application
dc.typeMeeting abstract
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage516
dc.source.conferenceMeeting Abstracts 208th Meeting of the Electrochemical Society
dc.source.conferencedate16/10/2005
dc.source.conferencelocationLos Angeles, CA California
imec.availabilityPublished - imec
imec.internalnotesSymposium High Dielectric Constant Gate Stacks III


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