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On the impact of the high-k properties (and defects) on the MOSFET electrical characteristics

dc.contributor.authorPantisano, Luigi
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHoussa, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T03:52:41Z
dc.date.available2021-10-16T03:52:41Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10977
dc.sourceIIOimport
dc.titleOn the impact of the high-k properties (and defects) on the MOSFET electrical characteristics
dc.typeProceedings paper
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage144
dc.source.endpage158
dc.source.conferenceCrystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV. Satellite Symposium to ESSDERC
dc.source.conferencedate16/09/2005
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. PV 2005-10


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