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Saturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments

dc.contributor.authorPavanello, M.A.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T04:00:35Z
dc.date.available2021-10-16T04:00:35Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11004
dc.sourceIIOimport
dc.titleSaturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage72
dc.source.endpage73
dc.source.conferenceProceedings of the IEEE International SOI Conference
dc.source.conferencedate3/10/2005
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec


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