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Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

dc.contributor.authorPawlak, Bartek
dc.contributor.authorDuffy, Ray
dc.contributor.authorJanssens, Tom
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSeveri, Simone
dc.contributor.authorRichard, Olivier
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorEyben, Pierre
dc.contributor.authorColombeau, B.
dc.contributor.authorCowern, N.E.B.
dc.contributor.authorCamillo-Castillo, R.A.
dc.contributor.authorJones, K.S.
dc.contributor.authorAboy, M.
dc.date.accessioned2021-10-16T04:01:52Z
dc.date.available2021-10-16T04:01:52Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11008
dc.sourceIIOimport
dc.titleEffect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorEyben, Pierre
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage43
dc.source.endpage49
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; PV 2005-05


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