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Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT

dc.contributor.authorPiontek, Andreas
dc.contributor.authorChoi, Li Jen
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorVanhoucke, Tony
dc.contributor.authorHijzen, Erwin
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-16T04:05:46Z
dc.date.available2021-10-16T04:05:46Z
dc.date.issued2005-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11021
dc.sourceIIOimport
dc.titleImpact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT
dc.typeProceedings paper
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpage62
dc.source.endpage63
dc.source.conferenceInternational Conference on Silicon Epitaxy and Heterostructures - ICSI
dc.source.conferencedate23/05/2005
dc.source.conferencelocationAwaji Island Japan
imec.availabilityPublished - imec


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