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Integration of ultra shallow junctions in PVD TaN nMOS transistors with flash lamp annealing

dc.contributor.authorSeveri, Simone
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorPawlak, Bartek
dc.contributor.authorDuffy, Ray
dc.contributor.authorKerner, Christoph
dc.contributor.authorMcCoy, S.
dc.contributor.authorGelpey, J.
dc.contributor.authorSelinger, T.
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T04:58:21Z
dc.date.available2021-10-16T04:58:21Z
dc.date.issued2005-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11188
dc.sourceIIOimport
dc.titleIntegration of ultra shallow junctions in PVD TaN nMOS transistors with flash lamp annealing
dc.typeProceedings paper
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.beginpage910
dc.source.endpage911
dc.source.conferenceExtended Abstracts International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate13/09/2005
dc.source.conferencelocationKobe Japan
imec.availabilityPublished - imec


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