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TaN metal gate etch with BCl3/O2 plamsa: gate profile and impact on high-k removal process
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TaN metal gate etch with BCl3/O2 plamsa: gate profile and impact on high-k removal process
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Shamiryan, Denis
;
Paraschiv, Vasile
;
Beckx, Stephan
;
Boullart, Werner
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1969
since deposited on 2021-10-16
Acq. date: 2025-12-16
Citations
Metrics
Views
1969
since deposited on 2021-10-16
Acq. date: 2025-12-16
Citations