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TaN metal gate etch with BCl3/O2 plamsa: gate profile and impact on high-k removal process

dc.contributor.authorShamiryan, Denis
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBeckx, Stephan
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-16T04:59:36Z
dc.date.available2021-10-16T04:59:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11192
dc.sourceIIOimport
dc.titleTaN metal gate etch with BCl3/O2 plamsa: gate profile and impact on high-k removal process
dc.typeOral presentation
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Microelectronics and Interfaces
dc.source.conferencedate21/03/2005
dc.source.conferencelocationSanta Clara, CA USA
imec.availabilityPublished - imec


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