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Deposition of Poly-SiGe with RTCVD

dc.contributor.authorShi, Xiaoping
dc.contributor.authorSchaekers, Marc
dc.contributor.authorBrus, Stephan
dc.contributor.authorZhao, Chao
dc.contributor.authorBrijs, Bert
dc.contributor.authorYu, HongYu
dc.contributor.authorKottantharayil, Anil
dc.date.accessioned2021-10-16T05:00:39Z
dc.date.available2021-10-16T05:00:39Z
dc.date.issued2005-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11195
dc.sourceIIOimport
dc.titleDeposition of Poly-SiGe with RTCVD
dc.typeProceedings paper
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorBrus, Stephan
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewno
dc.source.conferenceThe 8th Technical and Scientific Meeting of CREMSI:FEOL from 130 to 65 nm : scaling challenges
dc.source.conferencedate20/10/2005
dc.source.conferencelocationFuveau France
imec.availabilityPublished - imec


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