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The low-frequency noise in n-MOSFETs on strained silicon: Is there room for improvement?

dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDelhougne, Romain
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T05:05:37Z
dc.date.available2021-10-16T05:05:37Z
dc.date.issued2005-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11210
dc.sourceIIOimport
dc.titleThe low-frequency noise in n-MOSFETs on strained silicon: Is there room for improvement?
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage349
dc.source.endpage359
dc.source.conferenceULSI Process Integration IV
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2005-06


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