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Defect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates

dc.contributor.authorSimoen, Eddy
dc.contributor.authorSatta, Alessandra
dc.contributor.authorMeuris, Marc
dc.contributor.authorJanssens, Tom
dc.contributor.authorClarysse, Trudo
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorBrijs, Bert
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T05:07:27Z
dc.date.available2021-10-16T05:07:27Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11215
dc.sourceIIOimport
dc.titleDefect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorHoflijk, Ilse
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage691
dc.source.endpage696
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting
dc.source.conferencedate25/09/2005
dc.source.conferencelocationGiens France
imec.availabilityPublished - imec
imec.internalnotesSolid-State Phenomena; Vol. 108-109


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