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Analysis of depth-inhomogeneous strains in deep sub-micron silicon devices by TEM/CBED

dc.contributor.authorSpessot, A.
dc.contributor.authorArmigliato, A.
dc.contributor.authorBalboni, R.
dc.contributor.authorFrabboni, S.
dc.contributor.authorBenedetti, Alessandro
dc.date.accessioned2021-10-16T05:21:34Z
dc.date.available2021-10-16T05:21:34Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11259
dc.sourceIIOimport
dc.titleAnalysis of depth-inhomogeneous strains in deep sub-micron silicon devices by TEM/CBED
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage157
dc.source.endpage158
dc.source.conferenceProceedings 7th Multinational Congress on Microscopy
dc.source.conferencedate26/06/2005
dc.source.conferencelocationPortoroz Slovenia
imec.availabilityPublished - imec


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