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Impact of gate material on low-frequency noise of n-MOSFETs with 1.5 nm SiON gate dielectric: testing the limits of the number fluctuations theory

dc.contributor.authorSrinivasan, Purushothaman
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPantisano, Luigi
dc.contributor.authorClaeys, Cor
dc.contributor.authorMisra, D.
dc.date.accessioned2021-10-16T05:22:54Z
dc.date.available2021-10-16T05:22:54Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11263
dc.sourceIIOimport
dc.titleImpact of gate material on low-frequency noise of n-MOSFETs with 1.5 nm SiON gate dielectric: testing the limits of the number fluctuations theory
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage231
dc.source.endpage234
dc.source.conferenceNoise and Fluctuations: 18th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate19/09/2005
dc.source.conferencelocationSalamanca Spain
imec.availabilityPublished - imec
imec.internalnotesAIP Conference Proceedings; Vol. 780


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