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Low damage etch approach of a new porous SiOC(H) Low-k dielectric

dc.contributor.authorVan Aelst, Joke
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDupont, Tania
dc.contributor.authorHendrickx, Dirk
dc.contributor.authorTravaly, Youssef
dc.contributor.authorBoullart, Werner
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-10-16T05:51:10Z
dc.date.available2021-10-16T05:51:10Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11342
dc.sourceIIOimport
dc.titleLow damage etch approach of a new porous SiOC(H) Low-k dielectric
dc.typeProceedings paper
dc.contributor.imecauthorVan Aelst, Joke
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDupont, Tania
dc.contributor.imecauthorHendrickx, Dirk
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.conferenceDry Process Sysmposium
dc.source.conferencedate28/11/2005
dc.source.conferencelocationJeju Korea
imec.availabilityPublished - imec


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