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Ge-migration in s-Si-SiGe structures during implantation and annealing

dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorJanssens, Tom
dc.contributor.authorGeenen, Luc
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelhougne, Romain
dc.contributor.authorPawlak, Bartek
dc.contributor.authorRavit, Claire
dc.date.accessioned2021-10-16T06:35:35Z
dc.date.available2021-10-16T06:35:35Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11469
dc.sourceIIOimport
dc.titleGe-migration in s-Si-SiGe structures during implantation and annealing
dc.typeOral presentation
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference8th International Workshop on the Fabrication, Characterization and Modeling of Ultra-Shallow Junctions in Semiconductors
dc.source.conferencedate5/06/2005
dc.source.conferencelocationDaytona Beach, FL USA
imec.availabilityPublished - imec


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