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Degradation and nitridation dependence of steady-state stress induced leakage current (SILC)

dc.contributor.authorDe Blauwe, Jan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBellens, Rudi
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T14:21:16Z
dc.date.available2021-09-29T14:21:16Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1148
dc.sourceIIOimport
dc.titleDegradation and nitridation dependence of steady-state stress induced leakage current (SILC)
dc.typeOral presentation
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.conference27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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