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Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

dc.contributor.authorWang, Wenfei
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorLeys, Maarten
dc.contributor.authorBoeykens, Steven
dc.contributor.authorDegroote, Stefan
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorDas, Johan
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T07:01:59Z
dc.date.available2021-10-16T07:01:59Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11540
dc.sourceIIOimport
dc.titleComparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
dc.typeProceedings paper
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewno
dc.source.beginpageE8.20
dc.source.conferenceGaN, AlN, InN and Their Alloys
dc.source.conferencedate28/11/2004
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 831


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