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Improving CMOS performance by AVD® grown high-k dielectrics and advanced metal electrodes

dc.contributor.authorWeber, U.
dc.contributor.authorBoissière, O.
dc.contributor.authorLindner, J.
dc.contributor.authorSchuhmacher, M.
dc.contributor.authorLehnen, Peer
dc.contributor.authorManke, C.
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorCosnier, V.
dc.contributor.authorMcEntee, T.
dc.date.accessioned2021-10-16T07:05:09Z
dc.date.available2021-10-16T07:05:09Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11548
dc.sourceIIOimport
dc.titleImproving CMOS performance by AVD® grown high-k dielectrics and advanced metal electrodes
dc.typeProceedings paper
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.beginpage293
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2005-05


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