| dc.contributor.author | Zhao, Chao | |
| dc.contributor.author | Rittersma, Z.M. | |
| dc.contributor.author | van Berkum, J.G.M. | |
| dc.contributor.author | Snijders, J.H.M. | |
| dc.contributor.author | Hendriks, A. | |
| dc.contributor.author | Breimer, P. | |
| dc.contributor.author | Graat, P. | |
| dc.contributor.author | Maes, Jan | |
| dc.contributor.author | Witters, H. | |
| dc.contributor.author | Afanasiev, Valeri | |
| dc.contributor.author | Tois, E. | |
| dc.contributor.author | Tuominen, N. | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.author | De Gendt, Stefan | |
| dc.contributor.author | Heyns, Marc | |
| dc.date.accessioned | 2021-10-16T07:29:08Z | |
| dc.date.available | 2021-10-16T07:29:08Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11608 | |
| dc.source | IIOimport | |
| dc.title | Properties of HfTaxOy high-k layers deposited by ALCVD | |
| dc.type | Proceedings paper | |
| dc.contributor.imecauthor | Maes, Jan | |
| dc.contributor.imecauthor | Afanasiev, Valeri | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.contributor.imecauthor | De Gendt, Stefan | |
| dc.contributor.imecauthor | Heyns, Marc | |
| dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
| dc.source.peerreview | no | |
| dc.source.beginpage | 133 | |
| dc.source.endpage | 140 | |
| dc.source.conference | Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment | |
| dc.source.conferencedate | 15/05/2005 | |
| dc.source.conferencelocation | Quebec Canada | |
| imec.availability | Published - imec | |
| imec.internalnotes | Electrochemical Society Proceedings; Vol. 2005-05 | |
