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Simple analytical model to study the STC bias point in FinFETs

dc.contributor.authorBellodi, M.
dc.contributor.authorCamillo, L.M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T15:03:35Z
dc.date.available2021-10-16T15:03:35Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11712
dc.sourceIIOimport
dc.titleSimple analytical model to study the STC bias point in FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage205
dc.source.endpage209
dc.source.conferenceSilicon-on-Insulator Technology and Devices 13
dc.source.conferencedate6/05/2007
dc.source.conferencelocationChicago, IL USA
imec.availabilityPublished - imec
imec.internalnotesECS Trans.; Vol.6, nr.4


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