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Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer

dc.contributor.authorBuca, D.
dc.contributor.authorGoryll, M.
dc.contributor.authorHollaender, B.
dc.contributor.authorTrinkaus, H.
dc.contributor.authorMantl, S.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.date.accessioned2021-10-16T15:12:55Z
dc.date.available2021-10-16T15:12:55Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11823
dc.sourceIIOimport
dc.titleEnhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceMRS 2007 Spring Meeting Symposium F: Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
dc.source.conferencedate9/04/2007
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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