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Multi-gate devices for the 32nm technology node and beyond: challenges for selective epitaxial growth

dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorDixit, Abhisek
dc.contributor.authorLeys, Frederik
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T15:22:32Z
dc.date.available2021-10-16T15:22:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11897
dc.sourceIIOimport
dc.titleMulti-gate devices for the 32nm technology node and beyond: challenges for selective epitaxial growth
dc.typeMeeting abstract
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceBook of Abstracts 5th Int. Conf. Silicon Epitaxy and Heterostructures - ICSI-5
dc.source.conferencedate20/05/2007
dc.source.conferencelocationMarseille France
imec.availabilityPublished - imec
imec.internalnotesICSI-5 proceedings to be publ. as special issue of Thin Solid Films


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