dc.contributor.author | Depas, Michel | |
dc.contributor.author | Degraeve, Robin | |
dc.contributor.author | Nigam, Tanya | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Heyns, Marc | |
dc.date.accessioned | 2021-09-29T14:26:47Z | |
dc.date.available | 2021-09-29T14:26:47Z | |
dc.date.issued | 1996 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/1201 | |
dc.source | IIOimport | |
dc.title | Reliability of ultra-thin gate oxides below 3 nm in the direct tunneling regime | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Degraeve, Robin | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 533 | |
dc.source.endpage | 535 | |
dc.source.conference | Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials - SSDM | |
dc.source.conferencedate | 26/08/1996 | |
dc.source.conferencelocation | Yokohama Japan | |
imec.availability | Published - open access | |