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Critical processes for ultra-thin gate oxide integrity

dc.contributor.authorDepas, Michel
dc.contributor.authorHeyns, Marc
dc.contributor.authorNigam, Tanya
dc.contributor.authorKenis, Karine
dc.contributor.authorSprey, Hessel
dc.contributor.authorWilhelm, H.
dc.contributor.authorWilhelm, Rudi
dc.contributor.authorCrossley, A.
dc.contributor.authorSofield, C. J.
dc.contributor.authorGräf, D.
dc.date.accessioned2021-09-29T14:27:01Z
dc.date.available2021-09-29T14:27:01Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1203
dc.sourceIIOimport
dc.titleCritical processes for ultra-thin gate oxide integrity
dc.typeProceedings paper
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorSprey, Hessel
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage352
dc.source.endpage366
dc.source.conferenceProceedings of the 3rd International Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface
dc.source.conferencedate5/05/1996
dc.source.conferencelocationLos Angeles, CA USA
imec.availabilityPublished - open access


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