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Etch of Yb-doped poly gates to achieve low vt Ni-FUSI CMOS

dc.contributor.authorDemand, Marc
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorShamiryan, Denis
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVrancken, Christa
dc.contributor.authorBrus, Stephan
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-16T15:45:23Z
dc.date.available2021-10-16T15:45:23Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12041
dc.sourceIIOimport
dc.titleEtch of Yb-doped poly gates to achieve low vt Ni-FUSI CMOS
dc.typeProceedings paper
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewyes
dc.source.conferenceDry Process Symposium
dc.source.conferencedate13/11/2007
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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