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Junction photovoltage (JPV) techniques for ultra-shallow junction characterization

dc.contributor.authorFaifer, V.N.
dc.contributor.authorCurrent, M.I.
dc.contributor.authorSchroder, D.K.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T16:05:17Z
dc.date.available2021-10-16T16:05:17Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12145
dc.sourceIIOimport
dc.titleJunction photovoltage (JPV) techniques for ultra-shallow junction characterization
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage135
dc.source.endpage147
dc.source.conferenceAnalytical and Diagnostic Techniques for Semiconductor Materials, devices and Processes 7
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, issue 3


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