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Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology

dc.contributor.authorFaifer, V.N.
dc.contributor.authorSchroder, D.K.
dc.contributor.authorCurrent, M.I.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorTimans, P.J.
dc.contributor.authorZangerle, T.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorWong, T.M.H.
dc.contributor.authorMoussa, Alain
dc.contributor.authorMcCoy, S.
dc.contributor.authorGelpey, J.
dc.contributor.authorLerch, W.
dc.contributor.authorPaul, S.
dc.contributor.authorBolze, D.
dc.date.accessioned2021-10-16T16:05:32Z
dc.date.available2021-10-16T16:05:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12146
dc.sourceIIOimport
dc.titleLeakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMoussa, Alain
dc.source.peerreviewno
dc.source.beginpage246
dc.source.endpage250
dc.source.conferenceFrontiers of Characterization and Metrology for Nanoelectronics: 2007 (NIST)
dc.source.conferencedate27/03/2007
dc.source.conferencelocationGaithersburg, MD USA
imec.availabilityPublished - imec
imec.internalnotesAIP Conference Proceedings; Vol. 931


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