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Improved model to determine the generation lifetime in double gate SOI nMOSFETs

dc.contributor.authorGaleti, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T16:12:57Z
dc.date.available2021-10-16T16:12:57Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12180
dc.sourceIIOimport
dc.titleImproved model to determine the generation lifetime in double gate SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage343
dc.source.endpage351
dc.source.conferenceMicroelectonics Technology and Devices SBMICRO 2007
dc.source.conferencedate3/09/2007
dc.source.conferencelocationRio de Janeiro Brazil
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol.9, nr.1


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