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Carrier profiling of a cross-sectioned silicon nanowire by scanning spreading resistance microscopy

dc.contributor.authorHantschel, Thomas
dc.contributor.authorSchulz, Volker
dc.contributor.authorZschaetzsch, Gerd
dc.contributor.authorEyben, Pierre
dc.contributor.authorVerhulst, Anne
dc.contributor.authorSchmidt, Volker
dc.contributor.authorVereecken, Philippe
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T16:27:36Z
dc.date.available2021-10-16T16:27:36Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12244
dc.sourceIIOimport
dc.titleCarrier profiling of a cross-sectioned silicon nanowire by scanning spreading resistance microscopy
dc.typeProceedings paper
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVereecken, Philippe
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVereecken, Philippe::0000-0003-4115-0075
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.source.peerreviewno
dc.source.conferenceInternational Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling
dc.source.conferencedate6/05/2007
dc.source.conferencelocationNapa, CA USA
imec.availabilityPublished - imec


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