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Investigation of mask defectivity in full field EUV lithography

dc.contributor.authorJonckheere, Rik
dc.contributor.authorIwamoto, Fumio
dc.contributor.authorLorusso, Gian
dc.contributor.authorGoethals, Mieke
dc.contributor.authorRonse, Kurt
dc.contributor.authorKoop, H.
dc.contributor.authorSchmoeller, T.
dc.date.accessioned2021-10-16T16:58:17Z
dc.date.available2021-10-16T16:58:17Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12367
dc.sourceIIOimport
dc.titleInvestigation of mask defectivity in full field EUV lithography
dc.typeProceedings paper
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage673012
dc.source.conferenceSPIE Photomask Technology (BACUS)
dc.source.conferencedate17/09/2007
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access
imec.internalnotesSPIE Proceedings; Vol. 6730


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