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New insights in the impact of the breakdown mechanisms on the statistics of intrinsic and extrinsic breakdown in thin oxides

dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorOgier, Jean-Luc
dc.contributor.authorBellens, Rudi
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDepas, Michel
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T14:31:32Z
dc.date.available2021-09-29T14:31:32Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1241
dc.sourceIIOimport
dc.titleNew insights in the impact of the breakdown mechanisms on the statistics of intrinsic and extrinsic breakdown in thin oxides
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.source.peerreviewno
dc.source.conference27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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