Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Presentations
Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer
Publication:
Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer
Copy permalink
Date
2007
Presentation
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lieten, Ruben
;
Degroote, Stefan
;
Kuijk, Maarten
;
Borghs, Gustaaf
Journal
Abstract
Description
Metrics
Views
1927
since deposited on 2021-10-16
2
last month
2
last week
Acq. date: 2026-01-11
Citations
Metrics
Views
1927
since deposited on 2021-10-16
2
last month
2
last week
Acq. date: 2026-01-11
Citations