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Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer

dc.contributor.authorLieten, Ruben
dc.contributor.authorDegroote, Stefan
dc.contributor.authorKuijk, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T17:31:12Z
dc.date.available2021-10-16T17:31:12Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12488
dc.sourceIIOimport
dc.titleGrowth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer
dc.typeOral presentation
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conferenceEMRS Spring Meeting Symposium F: Novel Gain Materials and Devices Based on III-N-V Compounds
dc.source.conferencedate28/05/2007
dc.source.conferencelocationStrasbourg France
dc.identifier.urlhttp://www.emrs-strasbourg.com/files/pdf/symposium_f.pdf
imec.availabilityPublished - imec


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