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Selective epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain or buried SiGe channels

dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-16T17:36:54Z
dc.date.available2021-10-16T17:36:54Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12508
dc.sourceIIOimport
dc.titleSelective epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain or buried SiGe channels
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceInstitut für Bio- und Nanosysteme - IBN1-IT
dc.source.conferencedate26/04/2007
dc.source.conferencelocationJülich Duitsland
imec.availabilityPublished - imec


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