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Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorKudina, V.
dc.contributor.authorSmolanka, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T17:41:49Z
dc.date.available2021-10-16T17:41:49Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12525
dc.sourceIIOimport
dc.titleBehavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage39
dc.source.endpage42
dc.source.conferenceNoise and Fluctuations: 19th International Conference
dc.source.conferencedate9/09/2007
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec
imec.internalnotesAIP Conference Proceedings; Vol. 922


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