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SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance

dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorVerheyen, Peter
dc.contributor.authorTomasini, P.
dc.contributor.authorEneman, Geert
dc.contributor.authorLoo, Roger
dc.contributor.authorAbsil, Philippe
dc.contributor.authorThomas, S.G.
dc.contributor.authorLu, Jiong Ping
dc.contributor.authorWeijtmans, J.W.
dc.contributor.authorWise, R.
dc.date.accessioned2021-10-16T17:43:59Z
dc.date.available2021-10-16T17:43:59Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12532
dc.sourceIIOimport
dc.titleSiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance
dc.typeProceedings paper
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate18/09/2007
dc.source.conferencelocationIbaraki Japan
imec.availabilityPublished - open access


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