Publication:
SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance
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1886 since deposited on 2021-10-16
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Acq. date: 2025-12-12
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1886 since deposited on 2021-10-16
1last month
1last week
Acq. date: 2025-12-12
Citations