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SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance
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Authors
Machkaoutsan, Vladimir
;
Verheyen, Peter
;
Tomasini, P.
;
Eneman, Geert
;
Loo, Roger
;
Absil, Philippe
;
Thomas, S.G.
;
Lu, Jiong Ping
;
Weijtmans, J.W.
;
Wise, R.
Conference
International Conference on Solid State Devices and Materials - SSDM
Title
SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance
Publication type
Proceedings paper
Embargo date
9999-12-31
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