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SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance

Date

2007
Proceedings Paper
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dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorVerheyen, Peter
dc.contributor.authorTomasini, P.
dc.contributor.authorEneman, Geert
dc.contributor.authorLoo, Roger
dc.contributor.authorAbsil, Philippe
dc.contributor.authorThomas, S.G.
dc.contributor.authorLu, Jiong Ping
dc.contributor.authorWeijtmans, J.W.
dc.contributor.authorWise, R.
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T17:43:59Z
dc.date.available2021-10-16T17:43:59Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12532
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate18/09/2007
dc.source.conferencelocationIbaraki Japan
dc.title

SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance

dc.typeProceedings paper
dspace.entity.typePublication
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