Publication:
SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance
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1882 since deposited on 2021-10-16
Acq. date: 2025-10-23
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Views
1882 since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations