Publication:
SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance
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1888 since deposited on 2021-10-16
2last month
Acq. date: 2026-01-10
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Views
1888 since deposited on 2021-10-16
2last month
Acq. date: 2026-01-10
Citations